INTERFACIAL REACTION IN A-SI AU AND A-SI/CU THIN-FILM BILAYERS/

Authors
Citation
Sm. Heald et Zq. Tan, INTERFACIAL REACTION IN A-SI AU AND A-SI/CU THIN-FILM BILAYERS/, JPN J A P 1, 32, 1993, pp. 386-390
Citations number
8
Categorie Soggetti
Physics, Applied
Volume
32
Year of publication
1993
Supplement
32-2
Pages
386 - 390
Database
ISI
SICI code
Abstract
We have studied the interdiffusion and compound formation at the a-Si/ Au and a-Si/Cu thin film interfaces using x-ray reflectivity and grazi ng incidence EXAFS techniques. In the 0-degrees-C as-deposited samples , reaction between Si and Au is minimal, but reaction between Si and C u is significant Upon annealing for ten minutes in argon, the a-Si cry stallized and reacted quite extensively with Au at 160-degrees-C. Furt her reaction between Si and Cu proceeded at 130-degrees-C. The compoun ds formed appear to be metal-rich silicides in both the Si/Au and Si/C u systems. For Au/Si the silicide is likely stabilized on the surface of the newly formed crystallites.