X-RAY-ABSORPTION STUDY OF THE REACTION OF ZIRCONIUM THIN-FILMS ON SILICON(111)

X-ray absorption measurements of 100 angstrom Zr thin films deposited on Si(111) substrates in UHV have been obtained by using a total elect ron yield detector. Experiments were performed on Zr/Si thin films in order to obtain structural information and find the optimum annealing temperature to produce uniform ZrSi2 epitaxial thin films on Si(111) s ubstrates. A quantitative X-ray absorption fine structure analysis ind icates that the films annealed above 650-degrees-C form ZiSi2 disilici des, which have the orthorhombic-base centered C49 structure.