ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON

Authors
GREAVES GN DENT AJ DOBSON BR KALBITZER S MULLER G
Citation
Gn. Greaves et al., ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON, JPN J A P 1, 32, 1993, pp. 622-624
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-2
Pages
622 - 624
Database
ISI
SICI code
Abstract
X-ray absorption fine structure (XAFS) spectroscopy has been measured at glancing angles of incidence on 5x10(19) gallium atoms cm-3 ion-imp lanted in amorphous silicon. The effects of preparation (ion-damaged o r rf glow-discharge) of amorphous silicon are discussed. In particular , heat treatment has been investigated to examine the local structure of the dopants at various stages of annealing and recrystallisation.