RELATION BETWEEN THE LOCAL-STRUCTURE AND THE DESACTIVATION OF AS+ HEAVILY IMPLANTED SILICON

Authors
ALLAIN JL REGNARD JR BOURRET A TOURILLON G PIZZINI S PARISINI A ARMIGLIATO A
Citation
Jl. Allain et al., RELATION BETWEEN THE LOCAL-STRUCTURE AND THE DESACTIVATION OF AS+ HEAVILY IMPLANTED SILICON, JPN J A P 1, 32, 1993, pp. 625-627
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Year of publication
1993
Supplement
32-2
Pages
625 - 627
Database
ISI
SICI code
Abstract
Monocrystalline silicon wafers were implanted with As ions and the As atomic environment was sounded by Total Electron Yield EXAFS and fluor escence EXAFS. It is shown that the As atoms form inactive vacancy com plexes at low temperature and precipitates at high temperature. The st ructure of these complexes and precipitates are also discussed.