Extended X-ray absorption fine structure (EXAFS) technique is employed
to probe the local atomic structure of III-V pseudobinary solid solut
ion GaAsXP1-X, with the composition from X = 0 to X = 1. The first and
second near neighbor bond lengths and bond angles are obtained and th
e results imply distortion of the near neighbor atomic structure. The
atomic scale structure based on a random distribution of anions can be
described by using five special coordination tetrahedra, the applicat
ion on GaAsXP1-X is proved to be excellent agreement with the EXAFS re
sults.