X-RAY-ABSORPTION NEAR-EDGE STRUCTURE (XANES) STUDIES OF DILUTED MAGNETIC SEMICONDUCTORS (DMS) ZN1-XYXS(Y = MN, FE, CO) SYSTEMS

X-ray absorption near edge structure (XANES) spectra of the Diluted Ma gnetic Semiconductors (DMS) system Zn1-xMnxS have been measured at the Zn L(II,III)-edges and of Zn1-xYxS (Y = Mn, Fe, Co) at the S K-edge u sing total electron yield mode. The Zn L(III)-edge results for Zn1-xNn xS reveal a dramatic reduction in intensity of the first prominent fea ture, just above the edge, in the XANES spectra. Analysis of the S K-e dge XANES spectra for Zn1-xYxS revealed an increase in a pre-edge peak and a corresponding decrease in the first above-edge peak with increa se in transition metal content in the alloys. These results are consis tent with more S 3p- transition metal (Y) 3d(t2) hybridized states and less S 3p-Zn 4(s,p) and S 3p-Zn 3d hybridized states becoming availab le as transition metal content increases in the alloys.