X-RAY-ABSORPTION STUDIES OF RUTHENIUM SILICIDE

We have investigated the X-ray absorption fine structures (XAFS) of se veral ruthenium-silicon intermetallic compounds at the Ru L2,3, Ru K a nd Si K-edges. From the analysis of the Ru and Si K-edge XANES (X-Ray Absorption Near Edge Structures), particularly the relative intensity of the absorption feature just above the threshold, we found that ruth enium gains p-like electrons upon dilution in silicon. Likewise, compo und formation of silicon with ruthenium results in the increase of p-l ike electrons at the silicon site. The Ru L2,3-edge also exhibits vari ation in the whiteline intensity for ruthenium silicide of different c omposition. This is used to infer d charge redistribution at the Ru si te upon the formation of Ru-Si intermetallic compounds. The implicatio ns of the results are discussed.