OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS

Authors
FEENSTRA RM WOODALL JM PETTIT GD
Citation
Rm. Feenstra et al., OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS, Physical review letters, 71(8), 1993, pp. 1176-1179
Citations number
12
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
8
Year of publication
1993
Pages
1176 - 1179
Database
ISI
SICI code
0031-9007(1993)71:8<1176:OOBDBS>2.0.ZU;2-8
Abstract
The scanning tunneling microscope is used to study arsenic-related poi nt defects in low-temperature-grown GaAs. Tunneling spectroscopy revea ls a band of donor states located near E(v)+0.5 eV arising from the de fects. Images of this state reveal a central defect core, with two sat ellites located about 15 angstrom from the core. The structure of the defect is found to be consistent with that of an isolated arsenic anti site defect (As on a Ga site) in a tetrahedral environment.