IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY

Authors
DAUM W KRAUSE HJ REICHEL U IBACH H
Citation
W. Daum et al., IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY, Physical review letters, 71(8), 1993, pp. 1234-1237
Citations number
29
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
8
Year of publication
1993
Pages
1234 - 1237
Database
ISI
SICI code
0031-9007(1993)71:8<1234:IOSSLA>2.0.ZU;2-9
Abstract
Optical second-harmonic and sum-frequency spectra of clean and oxidize d Si(100) and Si(111) samples reveal a strong resonance band at 3.3 eV photon energy. It is concluded that the resonance arises from direct transitions between valence and conduction band states in a few monola yers of strained silicon at the Si-SiO2 interface and at the selvedge of clean reconstructed silicon surfaces.