The glass-forming region in the GeS2-Ga-I system has been determined a
nd its limits are 32 at.% Ga and 60 at.% I. The basic physicochemical
parameters (glass transition temperature, density and microhardness) o
f the glasses have been measured. They are transmitting in the mid IR-
region up to approximately 20 mum. A photobleaching effect in thin fil
ms has been observed, and a reversible shift of the optical absorption
edge after combined treatment by thermal annealing and ultraviolet ex
posure has been established.