INELASTIC ELECTRON RELAXATION-TIME IN THI N BI FILMS

The temperature dependences of the time tau(e) of the inelastic electr on interaction at various current flows are found from the analysis of the magnetic field dependences of the localization correction for the Bi film conductivity (approximately 100 angstrom thick). The temperat ure dependence of the electron-phonon energy relaxation time is found from the electron overheating effect reflected in the change of the de pendence tau(e)(T) due to the heating current. The electron-phonon rel axation time is compared with the contribution of the electron-phonon interaction processes to the time of the inelastic electron scattering .