CORRELATION OF ELECTRICAL-RESISTIVITY ANOMALIES AND CRYSTAL-STRUCTUREIN COPPER-GERMANIUM THIN-FILM ALLOYS

Authors
ABOELFOTOH MO TAWANCY HM KRUSINELBAUM L
Citation
Mo. Aboelfotoh et al., CORRELATION OF ELECTRICAL-RESISTIVITY ANOMALIES AND CRYSTAL-STRUCTUREIN COPPER-GERMANIUM THIN-FILM ALLOYS, Applied physics letters, 63(12), 1993, pp. 1622-1624
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
12
Year of publication
1993
Pages
1622 - 1624
Database
ISI
SICI code
0003-6951(1993)63:12<1622:COEAAC>2.0.ZU;2-5
Abstract
We report a nonmonotonic dependence of electrical resistivity on Ge co ncentration in Cu-Ge thin-film alloys containing 0-40 at.% Ge. This be havior is corrected with structural changes occurring in the alloys as the Ge concentration is increased. The resistivity is found to remain remarkably low (typically less than 10 muOMEGA cm) over a range of Ge concentration extending from 25 to 35 at.%.