NATIVE-OXIDE TOP-CONFINED AND BOTTOM-CONFINED NARROW STRIPE P-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER

A new form of AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an i nsulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidatio n and anisotropic oxidation of high Al composition AlyGa1-yAs layers ( y = 0.85, 0.87) located above and below the QW and waveguide active re gion. This structure provides excellent current and optical confinemen t, resulting in continuous wave threshold currents of approximately 8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a ap proximately 2.5 mum aperture.