LOW-FREQUENCY NOISE BEHAVIOR OF GAMMA-IRRADIATED PARTIALLY DEPLETED SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

This letter discusses the low-frequency noise behavior of partially de pleted silicon-on-insulator n-channel metal-oxide-semiconductor transi stors after gamma irradiation to a total dose of 100 krad(Si). The noi se characteristics both in linear operation and in saturation are inve stigated in detail. It is shown that the increase of the noise in the linear region is mainly due to the degradation of the sidewall isolati on regions. In contrast, the so-called kink-related noise overshoot is hardly affected by the irradiation, indicating that its origin is mos t likely not interface related. This result will be discussed in view of a recently proposed model for the noise overshoot.