O. Buchinsky et al., N-TYPE DELTA-DOPED STRAINED-QUANTUM-WELL LASERS FOR IMPROVED MODULATION BANDWIDTH, Applied physics letters, 70(14), 1997, pp. 1787-1789
Improved dynamic properties of strained single quantum well (QW) laser
s were obtained by the incorporation of an n-type delta doping at clos
e proximity to the strained QW active layer. The resultant modulation
bandwidth was almost doubled, from 3.5 GHz to more than 6.2 GHz. The i
ncreased modulation bandwidth is attributed to an improved carrier inj
ection resulting from the enhancement of the carrier transit time into
the QW, as well as a decrease in the significance of the adverse cont
ribution of carrier transport effects. (C) 1997 American Institute of
Physics.