N-TYPE DELTA-DOPED STRAINED-QUANTUM-WELL LASERS FOR IMPROVED MODULATION BANDWIDTH

Citation
O. Buchinsky et al., N-TYPE DELTA-DOPED STRAINED-QUANTUM-WELL LASERS FOR IMPROVED MODULATION BANDWIDTH, Applied physics letters, 70(14), 1997, pp. 1787-1789
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
14
Year of publication
1997
Pages
1787 - 1789
Database
ISI
SICI code
0003-6951(1997)70:14<1787:NDSLFI>2.0.ZU;2-Q
Abstract
Improved dynamic properties of strained single quantum well (QW) laser s were obtained by the incorporation of an n-type delta doping at clos e proximity to the strained QW active layer. The resultant modulation bandwidth was almost doubled, from 3.5 GHz to more than 6.2 GHz. The i ncreased modulation bandwidth is attributed to an improved carrier inj ection resulting from the enhancement of the carrier transit time into the QW, as well as a decrease in the significance of the adverse cont ribution of carrier transport effects. (C) 1997 American Institute of Physics.