PROBING SEMICONDUCTOR INTERFACES BY TRANSMISSION ELECTRON-MICROSCOPY

Authors
STEEDS JW CHERNS D
Citation
Jw. Steeds et D. Cherns, PROBING SEMICONDUCTOR INTERFACES BY TRANSMISSION ELECTRON-MICROSCOPY, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 545-556
Citations number
41
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Philosophical transactions-Royal Society of London. Physical sciences and engineering → ACNP
ISSN journal
09628428
Volume
344
Issue
1673
Year of publication
1993
Pages
545 - 556
Database
ISI
SICI code
0962-8428(1993)344:1673<545:PSIBTE>2.0.ZU;2-W
Abstract
The aim of this article is to review the many available techniques in transmission electron microscopy, drawing attention to their particula r characteristics and strengths. Where techniques are well established , the reader is referred to standard reference texts. Greater detail i s given about new and emerging techniques which hold promise for even more detailed future study of semiconductor interfaces.