ELECTRON-STATES AT SEMICONDUCTOR INTERFACES - THE INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS

A discussion is presented on the semiconductor interface barrier forma tion. Schottky barriers and heterojunction band offsets are analysed b y means of the intrinsic and extrinsic charge neutrality levels. These levels are shown to be controlled by the interface geometry and its l ocal chemistry. The chemical properties and the charge neutrality leve ls of different Schottky barriers are presented. Heterojunction band o ffsets are also analysed and are shown to depend on the electronegativ ity of the metal intralayers deposited at the interface: more electron egative metal atoms tend to reduce the heterojunction band offsets.