CHARACTERIZATION OF INTERSTITIAL OXYGEN STRIATIONS IN SILICON SINGLE-CRYSTALS BY THE MICRO-FT-IR METHOD

We will demonstrate that our micro-FT-IR mapping system is highly effe ctive for investigating the behavior of interstitial oxygen (Oi) in Cz ochralski-grown silicon single crystals. The micro-FT-IR system experi ences high space resolution, and Oi striations of as-grown silicon sin gle crystals or of oxygen micro-precipitation after a thermal treatmen t are quantitatively measured. Oi micro-distribution profiles of as-gr own crystals exhibit regular or irregular intervals and height, depend ing upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent upon their initial Oi micro-dist ribution profiles, and anomalous oxygen micro-precipitation is not obs erved.