NANOSTRUCTURE PATTERNS WRITTEN IN III-V SEMICONDUCTORS BY AN ATOMIC-FORCE MICROSCOPE

An atomic force microscope has been used to pattern nanometer-scale fe atures in III-V semiconductors by cutting through a thin surface layer of a different semiconductor, which is then used as an etch mask. Cut s up to 10 nm deep, which pass through 2-5 nm thick epilayers of both GaSb and InSb, have been formed. Lines as narrow as 20 and 2 nm deep h ave been made. Selective etchants and a 5 nm GaSb etch mask are used t o transfer patterns into an InAs epilayer. The results are promising f or applications requiring trench isolation, such as quantum wires and in-plane gated structures. (C) 1997 American Institute of Physics.