MIDINFRARED PHOTOCONDUCTIVITY IN INAS QUANTUM DOTS

Authors
BERRYMAN KW LYON SA SEGEV M
Citation
Kw. Berryman et al., MIDINFRARED PHOTOCONDUCTIVITY IN INAS QUANTUM DOTS, Applied physics letters, 70(14), 1997, pp. 1861-1863
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
14
Year of publication
1997
Pages
1861 - 1863
Database
ISI
SICI code
0003-6951(1997)70:14<1861:MPIIQD>2.0.ZU;2-P
Abstract
Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1-xAs matrix, normal i ncidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions o ut of the dots. The optical response of the quantum dots is investigat ed for several different dot structures. (C) 1997 American Institute o f Physics.