SPIN RELAXATION OF ELECTRONS IN P-DOPED GAAS QUANTUM-WELLS UNDER APPLIED VOLTAGE

The spin-relaxation times of the electrons excited in p-doped quantum wells are calculated with the spin-flip mechanism being the exchange i nteraction between the excited electrons and the Fermi sea of holes. T he spin mixing of the valence-hole states is included in the calculati on. On one hand, this mixing enhances the spin-flip scattering due to an increase of the hole density of states. On the other hand, the exch ange loses strength, resulting in spin-relaxation times similar to the ones calculated when neglecting valence spin mixing. The effects of a n applied gate voltage to the system are also investigated, since it v aries the exchange strength, by breaking the mirror symmetry of the po tential, and changes the hole concentration in the well. (C) 1997 Amer ican Institute of Physics.