EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GAAS FILM

Authors
CHEN Z PI FP HU XW LAI TS XU G MO D
Citation
Z. Chen et al., EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GAAS FILM, Acta physica Sinica, 5(9), 1996, pp. 705-712
Citations number
17
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
5
Issue
9
Year of publication
1996
Pages
705 - 712
Database
ISI
SICI code
1000-3290(1996)5:9<705:EOBSIF>2.0.ZU;2-3
Abstract
Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-pro be optical sources, the effects of bandfilling and bandgap shrinkage o n the femtosecond absorption saturation spectra of GaAs film have been studied. For exciting photon energy of 1.97 eV and carrier density of 1 x 10(18) cm(-3), an optical-induced absorption increase is observed and is attributed to bandgap shrinkage. The dependence of the absorpt ion coefficient change on the carrier temperature and the carrier dens ities is discussed.