STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI-28-40+ ION-IMPLANTED EPITAXIAL RESI2 FILMS GROWN ON N-SI(100) SUBSTRATES( AND AR)

We have studied the structural and electrical characteristics of epita xial ReSi2 films grown on n-Si(100) substrates which were implanted by either 300 keV Si+ or 380 keV Ar+ ions with a dose ranging from 1 X 1 0(12) to 1 X 10(15) cm-2 by using 2 MeV He-4+ ion backscattering spect rometry, X-ray diffraction, high resolution transmission electron micr oscopy, Auger electron spectroscopy and electrical measurements. Ion i mplantation causes amorphous clusters in the film, which overlap and g row to be an amorphous layer on further implantation. The threshold do ses for amorphization of epitaxial ReSi2 films are about 5 x 10(14) cm -2 for Si-28 and about 1 X 10(14) cm-2 for Ar-40. The resistivities of the implanted ReSi2 films are decreased with increasing degree of dis order (implantation dose), regardless of the kinds of implanted ions. The Si-28-implanted amorphous ReSi2 films recover the original epitaxy on thermal annealing at 700-degree-C for 30 min in a vacuum of 5 x 10 (-7) Torr, and so do the ReSi2 films partly amorphized by Ar-40 implan tation. On the contrary, ReSi2 fully amorphized by Ar-40 implantation (dose greater-than-or-equal-to 1 X 10(14) cm-2) does not recover on th ermal annealing even at 1000-degrees-C for 30 min. The resistivities o f the annealed samples recovered by an amount proportional to the degr ee of recovery of the epitaxy.