FABRICATION OF EXTREMELY THIN SILICON-ON-INSULATOR FOR FULLY-DEPLETEDCMOS APPLICATIONS

Authors
BINDAL A ROVEDO N RESTIVO J GALLI C OGURA S
Citation
A. Bindal et al., FABRICATION OF EXTREMELY THIN SILICON-ON-INSULATOR FOR FULLY-DEPLETEDCMOS APPLICATIONS, Thin solid films, 232(1), 1993, pp. 105-109
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
232
Issue
1
Year of publication
1993
Pages
105 - 109
Database
ISI
SICI code
0040-6090(1993)232:1<105:FOETSF>2.0.ZU;2-D
Abstract
A technique to produce extremely thin (< 1000 angstrom) silicon on ins ulator (SOI) films for fully-depleted CMOS fabrication is described. T he worst-case film thickness uniformity is +/-200 angstrom across a 12 5 mm wafer for a given area factor. This technique utilizes a low temp erature plasma enhanced chemical vapor deposition of Si3N4 acting as a chemical-mechanical polish-stop layer. The nitride film thickness is translated into the SOI by chemical-mechanical polishing.