Cs. Chen et al., THE ELECTRICAL CHARACTERIZATION OF GRAIN-BOUNDARIES IN ULTRA-FINE GRAINED Y-TZP, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 168(2), 1993, pp. 231-234
Starting from a sinter reactive powder prepared by a gel precipitation
technique, dense, ultra-fine grained (100-200 nm) yttria stabilized t
etragonal zirconia ceramics were obtained by sinter forging at a tempe
rature of 1100-degrees-C or by pressureless sintering at 1150-degrees-
C. The pressureless sintered compacts were subjected to further heat t
reatments at temperatures of 1250-1450-degrees-C or compressive deform
ation at 1250-degrees-C under uniaxial stresses of 20-100 MPa. The obt
ained samples were characterized mainly by impedance spectroscopy. Aft
er compressive deformation a decrease in grain boundary resistivity wa
s found which increased with applied stress. This can be interpreted i
n terms of a decrease in impurity segregation and a partial removal by
compressive deformation of a poorly conducting amorphous film around
the grains. It was also found that the grain boundary resistivity of s
amples sintered at 1150-degrees-C could be considerably reduced by fur
ther pressureless heat treatments at temperatures above 1250-degrees-C
. This effect is probably owing to dewetting of the grain boundary and
dissolution of grain boundary impurities into the bulk of the grains.