CDS SEMICONDUCTOR-DOPED SILICA XEROGELS

Authors
OTHMANI A BOVIER C PLENET JC DUMAS J CHAMPAGNON B MAI C
Citation
A. Othmani et al., CDS SEMICONDUCTOR-DOPED SILICA XEROGELS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 168(2), 1993, pp. 263-266
Citations number
12
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
168
Issue
2
Year of publication
1993
Pages
263 - 266
Database
ISI
SICI code
0921-5093(1993)168:2<263:CSSX>2.0.ZU;2-7
Abstract
CdS doped amorphous silica was prepared by the sol-gel method. The CdS concentration in weight varied from 5% to 20%. The samples were chara cterized by four different and complementary techniques: X-ray diffrac tion (XRD), high resolution transmission electron microscopy (HRTEM), low frequency inelastic Raman scattering (LOFIRS) and small angle X-ra y scattering (SAXS). These observations show that the size of the nano crystals does not depend on the CdS concentration.