HIGH-SPEED (GREATER-THAN-OR-EQUAL-TO-6 GHZ) INGAAS INP AVALANCHE PHOTODIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH A THIN QUATERNARY GRADING LAYER FOR HIGH BIT-RATE (GREATER-THAN-OR-EQUAL-TO 5 GBIT/S) SYSTEMS/

Authors
RIPOCHE G PEYRE JL LAMBERT M MOTTET S
Citation
G. Ripoche et al., HIGH-SPEED (GREATER-THAN-OR-EQUAL-TO-6 GHZ) INGAAS INP AVALANCHE PHOTODIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH A THIN QUATERNARY GRADING LAYER FOR HIGH BIT-RATE (GREATER-THAN-OR-EQUAL-TO 5 GBIT/S) SYSTEMS/, Journal de physique. III, 3(9), 1993, pp. 1761-1767
Citations number
10
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
9
Year of publication
1993
Pages
1761 - 1767
Database
ISI
SICI code
1155-4320(1993)3:9<1761:H(GIIA>2.0.ZU;2-W
Abstract
High speed InGaAs/InP avalanche photodiodes (APD) grown by gas source molecular beam epitaxy (GSMBE) for high bit rate (greater-than-or-equa l-to 5 Gbit/s) optical communications systems have been successfully p rocessed. As predicted by modelling, a thin quaternaty grading layer p ractically suppresses << hole pile up >> at the InGaAs/InP hetero-inte rface. Devices with bandwidth over 6 GHz, gain-bandwidth product in ex cess of 50 GHz, low dark current and excellent stability have been ach ieved with a high fabrication yield.