DISLOCATION SLIPPING, A NEW TECHNIQUE TO PRODUCE STEP-LIKE SURFACES, COMPATIBLE WITH QUANTUM CONFINEMENT SIZES

We propose a method to generate steps at the surface of GaAs single cr ystals. This method is based on plasticity properties of GaAs. In the simple slip condition, the {541} surfaces exhibit a set of very long p arallel lines (3 mm) along <561>. T.E.M. observations of these surface s by replica technique allow to observe very homogeneous regions, over 20 mum2 with step height h = 200 angstrom and step width l = 400 angs trom. Those geometrical dimensions are compatible with the quantum con finement and make the obtained surfaces alternate solutions to vicinal surfaces or high-index surfaces used to obtain quantum lines by direc t growth.