LOW-NOISE OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB

Authors
ROLLAND M GAILLARD S VILLEMAIN E RIGAUD D VALENZA M
Citation
M. Rolland et al., LOW-NOISE OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB, Journal de physique. III, 3(9), 1993, pp. 1825-1832
Citations number
5
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
9
Year of publication
1993
Pages
1825 - 1832
Database
ISI
SICI code
1155-4320(1993)3:9<1825:LOCONA>2.0.ZU;2-F
Abstract
Several metallization systems for producing ohmic contacts onto GaSb h ave been investigated. The minimization of contact resistivity was res pectively obtained with Au-Zn on p type and Au-Te on n type. It has be en shown that these results are due to an overdoped layer at the semic onductor surface. Low frequency noise measurements pointed out that th e techniques used allow the realization of devices without 1/f contact noise.