ANALYSIS OF THE DEPTH PROFILE OF FE-SI BURIED LAYERS IN FE-IMPLANTED SI WAFER BY SOFT-X-RAY EMISSION-SPECTROSCOPY()

Authors
GALAKHOV VR KURMAEV EZ SHAMIN SN ELOKHINA LV YARMOSHENKO YM BUKHARAEV AA
Citation
Vr. Galakhov et al., ANALYSIS OF THE DEPTH PROFILE OF FE-SI BURIED LAYERS IN FE-IMPLANTED SI WAFER BY SOFT-X-RAY EMISSION-SPECTROSCOPY(), Applied surface science, 72(1), 1993, pp. 73-77
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
72
Issue
1
Year of publication
1993
Pages
73 - 77
Database
ISI
SICI code
0169-4332(1993)72:1<73:AOTDPO>2.0.ZU;2-H
Abstract
The results of an investigation of Fe-implanted (E = 40 keV, D = 10(16 ) cm-2) silicon crystal by the use of soft X-ray emission spectroscopy with a variation of the exciting electron energy are presented. Based on the study of X-ray SiL2,3, Fe Lalpha and Si Kalpha spectra obtaine d at various exciting electron energies, the concentration profile as a function of the depth is constructed. The thickness of a buried FeSi -FeSi2 layer is estimated to be about 2000 angstrom.