DEPTH PROFILING OF INXGA1-XAS GAAS SUPERLATTICE/

The width of the interfaces between adjacent sublayers in an InxGa1-xA s/GaAs superlattice grown by MBE was studied by means of small-area XP S combined with Ar+ ion sputtering. An experimental depth resolution o f about 4 nm has been achieved in the profiles of the peaks of X-ray-e xcited photoelectrons and Auger electrons. A growth asymmetry of InxGa 1-xAs/GaAs and GaAs/InxGa1-xAs interfaces has been detected in the obt ained depth profiles. Only a negligible broadening of the heterointerf aces was observed up to the profiling depth of about 200 nm. The influ ence of casual effects of the ion sputtering on the experimental inter face width is discussed briefly.