ANNEALING BEHAVIOR OF MEV IMPLANTED CARBON IN SILICON

The annealing behavior of carbon implanted at 1.3 MeV with a dose of 5 X10(19) ions/m2 into Czochralski-grown silicon wafers is investigated using an x-ray double-crystal method, transmission electron microscopy , secondary-ion-mass spectroscopy, and infrared-absorption spectroscop y. For comparison, the behavior of boron implanted at 2.0 MeV with 5X1 0(19) ions/m2 is also investigated. X-ray rocking curve analysis shows that carbon produces a larger lattice strain than boron. For the samp les annealed at 1273 K, x-ray data indicate that the carbon atoms, unl ike the boron atoms, do not occupy substitutional sites. In addition, the present experimental data suggest that the interaction of intersti tial carbon atoms with silicon self-interstitials produced by ion impl antation suppresses the generation of dislocations and brings about th e reduction of lattice strain in the implanted region.