CREATION OF A NEW IN-BASED MATERIAL BY LASER IRRADIATION OF CHALCOPYRITE-TYPE TERNARY SEMICONDUCTORS

Authors
TANINO H FUJIKAKE H NAKANISHI H
Citation
H. Tanino et al., CREATION OF A NEW IN-BASED MATERIAL BY LASER IRRADIATION OF CHALCOPYRITE-TYPE TERNARY SEMICONDUCTORS, Journal of applied physics, 74(6), 1993, pp. 3821-3823
Citations number
2
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
6
Year of publication
1993
Pages
3821 - 3823
Database
ISI
SICI code
0021-8979(1993)74:6<3821:COANIM>2.0.ZU;2-7
Abstract
A new material mainly made of In has been created by laser irradiation of chalcopyrite-type ternary semiconductors containing In such as CuI nSe2. The Raman spectra of the created material are always the same in dependent of the original compounds (CuInS2, CuInSe2, CuInTe2, and AgI nSe2). The same spectra could not be produced by laser irradiation of CuGaSe2, AgGaSe2, In metal, or Cu-In alloys. The crystallization of a- Si:H was measured by laser irradiation in the same manner and it was f ound that CuInSe2 was more stable during laser irradiation than a-Si:H . Hence, CuInSe2 could be a promising candidate for solar cells.