CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES

Citation
Jl. Autran et al., CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES, Journal of applied physics, 74(6), 1993, pp. 3932-3935
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
6
Year of publication
1993
Pages
3932 - 3935
Database
ISI
SICI code
0021-8979(1993)74:6<3932:COSIS->2.0.ZU;2-L
Abstract
The three-level and spectroscopic charge pumping techniques, deep leve l transient spectroscopy and capacitance-voltage measurements are both used to determine the energy distribution of Si-SiO2 interface states on submicrometer metal-oxide-semiconductor field-effect transistors a nd metal-oxide-semiconductor capacitors. This study is a systematic co mparative analysis between charge pumping techniques and capacitance m easurements. The measurements have been performed on different structu res (n- and p-type materials, low and high interface states densities) and the performances of each technique have been compared.