Jl. Autran et al., CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES, Journal of applied physics, 74(6), 1993, pp. 3932-3935
The three-level and spectroscopic charge pumping techniques, deep leve
l transient spectroscopy and capacitance-voltage measurements are both
used to determine the energy distribution of Si-SiO2 interface states
on submicrometer metal-oxide-semiconductor field-effect transistors a
nd metal-oxide-semiconductor capacitors. This study is a systematic co
mparative analysis between charge pumping techniques and capacitance m
easurements. The measurements have been performed on different structu
res (n- and p-type materials, low and high interface states densities)
and the performances of each technique have been compared.