RECOMBINATION CENTERS IN CZOCHRALSKI-GROWN P-SI

A sensitive deep-level transient spectrometer operating in the range 3 00-600 K has been use to detect the defect responsible for the minorit y-carrier lifetime in p-type Czochralski-grown Si. The characteristics of this defect (energy level, barrier for hole capture, hole and elec tron capture rates, and concentration) have been determined. This leve l is, as expected, located near the middle of the forbidden gap. We ve rified that it is indeed responsible for the lifetime by a comparison between the-calculated value and the result of direct measurements. If this defect is an impurity, it could be manganese.