OPTICAL AND ELECTRICAL-PROPERTIES OF LAYER SEMICONDUCTOR P-GASE DOPEDWITH ZN

Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman tec hnique in a wide range from 0.005 to 0.5 at. % to the stoichiometric m elt. Radiative recombination mechanisms have been investigated by usin g photoluminescence (PL) measurements. The PL spectra in Zn-doped samp les at 77 K are dominated by three emission bands at 1.75, 1.63, and 1 .27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the incr ease in the amount of Zn. In addition to the results of Hall effect me asurements, it is found that the 1.63 and 1.27 eV emission bands are a ssociated with the acceptor levels at 0.12 and 0.3 eV above the valenc e band, respectively. For the 1.27 eV emission band, the temperature d ependences of the PL intensity, peak energy, and half-width are charac terized by the configurational coordinate model.