We report photoluminescence (PL) results obtained on p-type ZnSe epila
yers grown by molecular beam epitaxy. As an acceptor dopant, we used a
n active nitrogen beam produced by a free radical nitrogen source. On
the basis of a detailed analysis of PL data we propose a simple semiqu
antitative method for a quick and contactless evaluation of the net ac
ceptor concentration in p-type ZnSe. In particular, we show that the i
ntensity ratio of the donor-acceptor pair (DAP) emission to the accept
or-bound exciton (I1) emission strongly depends on both the excitation
power and the quality of the sample, and because of that it cannot by
itself be regarded as a good measure of the net acceptor concentratio
n. On the other hand, the intensity of the DAP emission under saturati
on excitation shows a simple direct proportionality to the net accepto
r concentration, thus providing a reliable tool for determining the re
lative doping level in p-type ZnSe films.