WANNIER-STARK LOCALIZATION IN INGAAS GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES/

Authors
LIU W ZHANG YH JIANG DS WANG RZ ZHOU JM MEI XB
Citation
W. Liu et al., WANNIER-STARK LOCALIZATION IN INGAAS GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES/, Journal of applied physics, 74(6), 1993, pp. 4274-4276
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
6
Year of publication
1993
Pages
4274 - 4276
Database
ISI
SICI code
0021-8979(1993)74:6<4274:WLIIGS>2.0.ZU;2-9
Abstract
We have observed Wannier-Stark localization in strained In0.2Ga0.8As/G aAs superlattices by low- and room-temperature photocurrent spectra me asurements. The experimental results are well in agreement with the th eoretical predictions. A large field-induced modulation response of th e absorption edge of the superlattices at room temperature suggests th e possibilities of the application to the design of various kinds of e lectro-optical devices operating at a wavelength of 0.98 mum, based on Wannier-Stark localization effects.