LOW-TEMPERATURE PHOTOLUMINESCENCE STUDY OF CD1-XMNXTE FILMS GROWN BY PULSED-LASER EVAPORATION AND EPITAXY

Investigations of low-temperature photoluminescence were carried out o n Cd1-xMnxTe films grown by pulsed laser evaporation and epitaxy on no minally GaAs(111), nominally Cd1-yZnyTe(001) substrates, and Cd1-yZnyT e(001) vicinal substrates. Excitonic and impurity related transitions were clearly identified in the photoluminescence spectra. Very narrow exciton peaks with full width at half maximum of less than 10 meV show that high-quality films can be produced with this growth technique. O ur results suggest that the extrinsic luminescence peaks originate fro m the accumulation of defects or impurities at the different interface s.