SIMS DEPTH PROFILING OF IMPLANTED LAYERS IN SILICON UNDER N-2(-BOMBARDMENT() ION)

Authors
SMIRNOV VK SIMAKIN SG
Citation
Vk. Smirnov et Sg. Simakin, SIMS DEPTH PROFILING OF IMPLANTED LAYERS IN SILICON UNDER N-2(-BOMBARDMENT() ION), Vacuum, 44(9), 1993, pp. 885-887
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
44
Issue
9
Year of publication
1993
Pages
885 - 887
Database
ISI
SICI code
0042-207X(1993)44:9<885:SDPOIL>2.0.ZU;2-C
Abstract
A number of implants in silicon have been analysed by SIMS under the N 2+ primary ion bombardment. Results obtained with traditional O2+ and Cs+ primary beams are presented for comparison. The N2+ primary beam i s shown to be efficient enough in the depth profiling of B, P, As, F, Cl, S, Na, K. A significant intensity of the emission of BN- secondary ions is noted.