CAPACITANCE-VOLTAGE CHARACTERISTICS OF SUPERLATTICES

Capacitance-voltage characteristics of a Schottky contact have been de termined for a structure with a periodic sequence of quantum wells sep arated by tunnel-opaque barriers. At low temperatures the voltage depe ndence of the capacitance was found to be stepped with a constant jump of the reciprocal capacitance. A method for finding the surface densi ty of electrons in quantum wells from the capacitance-voltage characte ristics has been proposed. It was found that penetration of the electr ic field from the schottky barrier into the structure could have an os cillatory coordinate dependence.