FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES

Factors responsible for the difference in the dose dependences of the intensities of different luminescence bands of semiconductors has been analyzed. An example of the dependence of the intensities of the lumi nescence bands with the luminescence maximum located at hv(m) = 1.20 a nd 1.51 eV in the spectra of n-type GaAs:Te crystals on the bombardmen t with fast electrons showed that this difference can be attributed no t only to radiation-stimulated changes in the concentration of the lum inescence centers, but also to different types of the dependence of th e luminescence band intensities on the excitation intensity. These fac tors should be taken into account in determining the concentration of the luminescence centers from the dose dependences of the intensities of the luminescence bands emitted by radiation-stimulated samples.