INELASTIC-COLLISIONS OF SLOW-ELECTRONS WITH SIO2 EVAPORATION PRODUCTS

Inelastic collisions of slow electrons with the products of evaporatio n of silicon dioxide are investigated by the method of extended inters ecting beams with recording of the optical signal from the zone of int ersection. Evaporation from the bare surface is induced by electron-be am heating. Spectral bands associated with SiO and SiO+ are observed, along with spectral lines of the silicon atom. The effective electron- impact excitation cross sections,and their energy dependence are measu red for all the spectral objects in the range of electron energies 0-1 00 eV.