THE LOW-TEMPERATURE ANNEALING OF P-CADMIUM TELLURIDE IN GALLIUM-BATH

The influence of post-growth low-temperature doping with Ga on the PL properties of the p-CdTe bulk crystals have been investigated. It was shown that during annealing in Ga-bath, the atoms of Ga incorporate in to p-CdTe as Ga(Cd) donors. In crystals with Cu(Cd) and Li(Cd) as resi dual acceptors, Ga atoms replace Cu and Li in Cd sites to form two sha llow donors, Ga(Cd) and (Cu, Li)i per one atom of Ga. Comparisons of t he Ga-annealing of p-CdTe with the annealing in vacuum, in Cd vapour a nd in Hg-Te atmosphere have been made.