STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS

Authors
BONARD JM GANIERE JD HEUN S PAGGEL JJ RUBINI S SORBA L FRANCIOSI A
Citation
Jm. Bonard et al., STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS, Philosophical magazine letters, 75(4), 1997, pp. 219-226
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
75
Issue
4
Year of publication
1997
Pages
219 - 226
Database
ISI
SICI code
0950-0839(1997)75:4<219:SIPZAL>2.0.ZU;2-R
Abstract
We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0. 04Ga0.96As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111 ) and <((11)over bar 1)> fault planes and single Frank stacking faults lying on <((1)over bar 11)> or <(1(1)over bar 1)> fault planes by com paring experimental images with the predictions obtained with the g.b = 0 rule as well as with simulated images.