THERMAL DISORDER IN ADSORBED CL ON SI(100)

Citation
Cc. Cheng et al., THERMAL DISORDER IN ADSORBED CL ON SI(100), The Journal of chemical physics, 99(7), 1993, pp. 5581-5585
Citations number
32
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
99
Issue
7
Year of publication
1993
Pages
5581 - 5585
Database
ISI
SICI code
0021-9606(1993)99:7<5581:TDIACO>2.0.ZU;2-0
Abstract
Thermal broadening of Cl+ electron stimulated desorption ion angular d istribution (ESDIAD) patterns, related to the vibrational motion of th e adsorbate, has been investigated by subtraction of patterns measured at different temperatures. In the case of Cl on Si(100), the observed difference pattern between 130 and 305 K indicates that azimuthally i sotropic motion of Cl occurs about the most probable Si-Cl bond direct ion. Equal distributions from the in-plane and out-of-plane bending mo tions are observed, correlating with the approximately 200 cm-1 freque ncies associated with these motions.