M. Aprili et P. Nedellec, APPROACHING THE NI PERCOLATION-THRESHOLD BY THIN-FILM IRRADIATION, Journal of physics. Condensed matter, 9(14), 1997, pp. 2999-3009
We have reproduced a percolating structure in thin Ni films by an inho
mogeneous sputtering process. The morphological disorder has been stud
ied using TEM and 'in situ' transport measurements during ion irradiat
ion. The fluence dependence of the resistance shows a singularity foll
owing a 2D percolation law. The formation of the hole structure is con
sistent with a Poisson mechanism. A computer simulation developed usin
g a code based on a Poisson statistics allows us to account for the ex
perimental values of the percolation threshold (p(c) = 0.37) and the o
verall shape of the infinite cluster.