STABLE ELECTRONIC-ENERGY LEVELS IN THE PRESENCE OF OFF-DIAGONAL DISORDER

Authors
Citation
I. Laszlo, STABLE ELECTRONIC-ENERGY LEVELS IN THE PRESENCE OF OFF-DIAGONAL DISORDER, International journal of quantum chemistry, 48(2), 1993, pp. 135-146
Citations number
45
Categorie Soggetti
Chemistry Physical
ISSN journal
00207608
Volume
48
Issue
2
Year of publication
1993
Pages
135 - 146
Database
ISI
SICI code
0020-7608(1993)48:2<135:SELITP>2.0.ZU;2-T
Abstract
It is demonstrated that the topological arrangement of atoms can guara ntee the existence of stable electronic eigenvalues. These levels are stable in the presence of off-diagonal disorder. Graph theory is used to describe the topological structure of the Hamiltonian. The actual a pplications are presented in tight-binding approximation. It was found that graph theory can be used even if the atoms have more than one at omic orbital. Also, the localization properties of the topologically d etermined eigenvalues are studied. (C) 1993 John Wiley & Sons, Inc.