SELF-ENHANCEMENT OF A-CENTER ANNEALING IN SILICON

Authors
MAKARENKO LF
Citation
Lf. Makarenko, SELF-ENHANCEMENT OF A-CENTER ANNEALING IN SILICON, Semiconductor science and technology, 8(9), 1993, pp. 1692-1694
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
9
Year of publication
1993
Pages
1692 - 1694
Database
ISI
SICI code
0268-1242(1993)8:9<1692:SOAAIS>2.0.ZU;2-#
Abstract
Thermal annealing of the E(c) - 0.18 eV level in Czochralski-grown sil icon crystals irradiated by Co-60 gamma rays has been investigated usi ng Hall effect measurements. An anomalous annealing kinetics has been found, in which the centre disappearance probability is increased with isothermal annealing time. A tentative kinetic model of the process i s proposed.