GETTERING OF DONOR IMPURITIES BY GD IN GAAS

Authors
KOVALENKO V KRASNOV V MALYSHEV V
Citation
V. Kovalenko et al., GETTERING OF DONOR IMPURITIES BY GD IN GAAS, Semiconductor science and technology, 8(9), 1993, pp. 1755-1757
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
9
Year of publication
1993
Pages
1755 - 1757
Database
ISI
SICI code
0268-1242(1993)8:9<1755:GODIBG>2.0.ZU;2-Z
Abstract
Optical and electrical measurements of GaAs layers grown by liquid-pha se epitaxy with different amounts of Gd metal added to the Bi and Pb s olutions are reported. The presence of Gd during growth causes suppres sion of donor impurity-related luminescence bands due to the gettering of donor impurities. Gadolinium gettering contributed to the reductio n of the concentration of donors below the concentration of acceptors. This gettering is driven by chemical reactions in the solution rather than in the solid.